Microsecond infrared beam bending in photorefractive iron doped indium phosphide

نویسندگان

  • N. Fressengeas
  • C. Dan
  • D. Wolfersberger
چکیده

A time resolved study of the behavior of a single beam in photorefractive iron doped indium phosphide is provided down to the microsecond range, showing that infrared beam bending does occur on the micro-second time scale for moderate beam intensities. Two distinct time scales are evidenced, the behavior of which are the sign of two different photorefractive mechanisms.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Experimental control of steady state photorefractive self-focusing in InP:Fe at infrared wavelengths

This paper reports an experimental study of the self-focusing process in iron doped indium phosphide at an 1.06 micron wavelength, identifying the influence of temperature, beam intensity and background illumination for two different iron dopings. We point out that the iron ionization ratio is at the origin of different qualitative behavior previously reported and we show that it is possible to...

متن کامل

Time- and space-resolved dynamics of ablation and optical breakdown induced by femtosecond laser pulses in indium phosphide

Related Articles Negative effect of crystallization on the mechanism of laser damage in a HfO2/SiO2 multilayer J. Appl. Phys. 112, 123103 (2012) Anomalous transport of Sb in laser irradiated Ge Appl. Phys. Lett. 101, 172110 (2012) Pulsed laser operated high rate charging of Fe-doped LiNbO3 crystal for electron emission J. Appl. Phys. 112, 073107 (2012) Formation of nanostructured TiO2 by femtos...

متن کامل

The Role of III-V Substrate Roughness and Deoxidation Induced by Digital Etch in Achieving Low Resistance Metal Contacts

To achieve low contact resistance between metal and III-V material, transmission-line-model (TLM) structures of molybdenum (Mo) were fabricated on indium phosphide (InP) substrate on the top of an indium gallium arsenide (InGaAs) layer grown by molecular beam epitaxy. The contact layer was prepared using a digital etch procedure before metal deposition. The contact resistivity was found to decr...

متن کامل

Near-infrared sensitive photorefractive device using polymer dispersed liquid crystal and BSO:Ru hybrid structure.

A near-infrared sensitive hybrid device, based on a Ru-doped BSO photorefractive substrate and polymer dispersed liquid crystal (PDLC) layer, is reported. It is found that the photoexcited charge carriers generated in the BSO:Ru substrate create an optically induced space charge field, sufficient to penetrate into the PDLC layer and to re-orient the LC molecules inside the droplets. Beam-coupli...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012